cystech electronics corp. spec. no. : c438q8 issued date : 2009.02.11 revised date : page no. : 1/9 MTC2804Q8 cystek product specification n- and p-channel enhancement mode power mosfet MTC2804Q8 n-ch p-ch bv dss 40v -40v i d 7a -6a r dson(max) 28m 44m description the MTC2804Q8 consists of a n-channel and a p-ch annel enhancement-mode mosfet in a single sop-8 package, providing the designer with the best combin ation of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applicat ions such as dc/dc converters . features ? simple drive requirement ? low on-resistance ? fast switching speed ? rohs compliant package equivalent circuit outline MTC2804Q8 s source d drain g gate sop-8
cystech electronics corp. spec. no. : c438q8 issued date : 2009.02.11 revised date : page no. : 2/9 MTC2804Q8 cystek product specification absolute maximum ratings (tc=25 c, unless otherwise noted) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 40 -40 v gate-source voltage v gs 20 20 v continuous drain current @t c =25 c (note 1) i d 7 -6 a continuous drain current @t c =100 c (note 1) i d 6 -5 a pulsed drain current (note 2) i dm 28 -24 a pd 2.4 w total power dissipation @t a =25 c (note 1) linear derating factor 0.016 w / c operating junction and storage te mperature range tj, tstg -55~+175 c thermal resistance, junction-to-ambient (note 1) rth,ja 62.5 c/w thermal resistance, junction-to-case rth,jc 25 c/w note : 1.surface mounted on 1 in2 copper pad of fr-4 board, 135 c/w when mounted on minimum copper pad 2. pulse width limited by maximum junction temperature n-channel electrical characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 40 - - v v gs =0, i d =250 a v gs(th) 1.0 1.5 3.0 v v ds =v gs , i d =250 a i gss - - 100 na v gs =20v, v ds =0 - - 1 a v ds =32v, v gs =0 i dss - - 25 a v ds =30v, v gs =0, tj=125c - 25 28 i d =7a, v gs =10v *r ds(on) - 30 36 m i d =6a, v gs =7v *g fs - 19 - s v ds =5v, i d =7a dynamic ciss - 916 - coss - 79 - crss - 56 - pf v ds =20v, v gs =0, f=1mhz *t d(on) - 2.3 - *t r - 7.2 - *t d(off) - 11 - *t f - 6 - ns v ds =10v, i d =1a, v gs =10v, r g =6 *qg - 9.1 - *qgs - 2.3 - *qgd - 3 - nc v ds =20v, i d =7a, v gs =10v source-drain diode *v sd - - 1.3 v v gs =0v, i s =7a *i s - - 7 a *i sm - - 20 a *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c438q8 issued date : 2009.02.11 revised date : page no. : 3/9 MTC2804Q8 cystek product specification p-channel electrical characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -40 - - v v gs =0, i d =-250 a v gs(th) -1.0 -1.5 -3.0 v v ds =v gs , i d =-250 a i gss - - 100 na v gs =20v, v ds =0 - - -1 a v ds =-32v, v gs =0 i dss - - -25 a v ds =-30v, v gs =0, tj=125 c - 38 44 i d =-6a, v gs =-10v *r ds(on) - 46 55 m i d =-5a, v gs =-7v *g fs - 11 - s v ds =-5v, i d =-6a dynamic ciss - 1039 - coss - 327 - crss - 301 - pf v ds =-20v, v gs =0, f=1mhz *t d(on) - 6.5 - *t r - 9.5 - *t d(off) - 18 - *t f - 10 - ns v ds =-10v, i d =-1a, v gs =-10v, r g =6 *qg - 9 - *qgs - 1.5 - *qgd - 2.9 - nc v ds =-20v, i d =-6a, v gs =-10v source-drain diode *v sd - - -1.3 v v gs =0v, i s =-6a *i s - - -6 *i sm - - -20 a *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c438q8 issued date : 2009.02.11 revised date : page no. : 4/9 MTC2804Q8 cystek product specification n-channel characteristic curves on-resistance variation with temperature r - normalized drain-source on-resistance ds(on) t - jun ct i on temper at ur e (c) 0.4 -50 0.7 1.0 0 j -25 25 d i = 7a v = 10v 1.3 1.6 1.9 gs 125 50 75 100 150 on-resistance v ariation with gate-to-source voltage t = 125c v - gat e-sour ce vol t age(v) 0.01 2 ds(on) 0.02 0.04 0.03 gs 46 t = 25c a a 0.08 0.06 0.05 0.07 0.09 81 0 i = 3.5 a d r - on-resist ance( ) r -normalized drain-source on-resistance ds(on) on-resistance variation with drain current and gate voltage 1.6 0.8 0 1.2 1.0 1.4 5 10 2.2 1.8 2.0 2.4 15 20 7.0 v 8.0 v 10 v 25 i - drain current(a) d gs v = 6.0 v v - dr ai n-sour ce vol t age(v) i - drain current(a) 0 0 d 5 ds 12 8.0v v = 10v 10 15 7.0v gs 345 on-region charact erist ics 25 20 6.0v t = -55c v - gat e-t o-sour ce vol t age(v) i - drain current(a) 3 d 3 0 6 4 gs v = 10v 12 9 15 18 ds a 6 5 7 25c 125c transfer charact erist ics body diode forwar d volt age variat ion wit h source current and temperature 25c t = 125c v - body diode forward voltage(v) is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 a gs 1.00.8 1.2 -55c 1.4
cystech electronics corp. spec. no. : c438q8 issued date : 2009.02.11 revised date : page no. : 5/9 MTC2804Q8 cystek product specification n-channel characteri stic curves(cont.) q - gat e char ge(nc) v - gat e sour ce vol t age(v) gs 0 0 2 4 g 4 8 i = 7a 6 8 10 d 12 16 20v v = 15v ds gat e charge charact erist ics v - drain-source voltage( v ) capacitance( pf ) 600 0 0 300 ds 10 cr ss co ss 900 1200 ci ss 20 30 40 gs f = 1mhz v = 0 v ca p a c i t a n c e ch a r a c t e r i st i c s dc v - dr ai n-sour ce vol t age( v ) maximum safe operating area i - drain current( a ) v = 10v single pulse r = 125c/ w t = 25c 0.1 0.01 d 0.1 ds 1 ja a gs r limit 1 10 100 ds(on) 10s 10 100 100 s 10ms 100ms 1s 1ms p( p k ) , peak tr an si en t po w er ( w ) 20 0 10 30 40 50 single pulse r = 125c/ w t = 25c a ja t ,time ( sec ) 0.001 0.01 0.1 1 100 10 1 1000 single pulse maximum power dissipation -1 t ,time (sec) transient thermal response curve r( t z tr ansi ent ther mal resi st ance 10 0.001 -4 0.01 0.02 10 -3 10 -2 10 single pulse 0.01 dut y cycle = 0.5 0.1 0.1 0.05 0.2 1 ),no rmali ed ef fectiv e p ja 4.r (t)=r(t) + r 3.t - t = p * r (t ) ja 2.r =125c/ w 1.dut y cycle,d = dm 1 11 0 j 1000 100 t1 t2 ja ja a t2 t1 not es :
cystech electronics corp. spec. no. : c438q8 issued date : 2009.02.11 revised date : page no. : 6/9 MTC2804Q8 cystek product specification p-channel characteristic curves on-resi st ance vari at i on wi t h drai n current and gat e vol t age on-resist ance variat ion wit h temperat ure t - junct i on temper at ur e ( c) r - normalized drain-source on-resistance -50 0.4 ds(on) 0.7 1.0 0 j -25 25 d i = -6 a v = - 10v 1.3 1.6 1.9 gs 125 50 75 100 150 on-resi st ance var iat i on wit h gat e-t o-sour ce volt age t = 25c t = 125c - v - gate-to-source voltage(v) 6 r - on-resist ance( ) 0 2 ds(on) 0.05 gs 4 a 0.1 0.15 0.2 8 a 10 i = - 3a d a t = -55c -v - gate-source voltage( v ) 2 2 0 4 d gs 3 v = - 10v 10 6 8 12 ds 4 5 6 25c 125c tr ansf er char act er i st i cs -i - drain current( a ) body diode forward volt age variat ion wit h source current and temperat ure 25c -v - body diode forward volt age(v) -is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 gs a t = 125c 1.0 0.8 1.2 -55c 1.4 -v - drain-to-source voltage(v) 15 -i - drai n curre nt(a) 0 0 d 5 10 ds 1 2 - 6.0v v = - 10.0v - 7.0v 20 25 gs 3 45 on-region charact erist ics - 8.0v - i - drain current (a) r -normalized drain-source on-resistance 1.5 0.5 0 ds(on) 1 5 d 10 gs v = - 6.0 v 2 - 7.0 v 15 20 - 8.0 v - 10.0 v 25 2.5
cystech electronics corp. spec. no. : c438q8 issued date : 2009.02.11 revised date : page no. : 7/9 MTC2804Q8 cystek product specification p-channel characteristic curves(cont.) v = - 15v q - gate charge(nc) - v - gate-to-source voltage(v) gs 0 0 2 4 3 g d i = - 6a 6 8 10 69 12 - 20v ds ga t e ch a r ge ch a r a c t e r i st i c s - v , drain-source voltage(v) capacitance(pf ) 0 0 300 600 ds 10 cr ss co ss 900 1200 1500 ci ss 20 30 40 gs f = 1 mhz v = 0 v capacitance characteristics dc -v - drain-source voltage( v ) m aximum saf e operat ing area -i - drain current( a ) v = 10v single pulse r = 125c/ w t = 25c 0.1 0.01 d 0.1 ds 1 ja a gs r limit 1 10 100 ds(on) 10s 10 100 100 s 10ms 100ms 1s 1ms p( p k ) , peak tr an si en t po w er ( w ) 20 0 10 30 40 50 single pulse r = 125c/ w t = 25c a ja t ,time ( sec ) 0.001 0.01 0.1 1 100 10 11 0 0 0 single pulse maximum power dissipation -1 t ,time (sec) transient thermal response curve r( t ),normalized effective tr ansi ent ther mal resi st ance 10 0.001 -4 0.01 0.02 10 -3 10 -2 10 single pulse 0.01 dut y cycle = 0.5 0.1 0.1 0.05 0.2 1 p ja 4.r (t)=r(t) + r 3.t - t = p * r (t ) ja 2.r =125c/ w 1.dut y cycle,d = dm 1 11 0 j 1000 100 t1 t2 ja ja a t2 t1 not es :
cystech electronics corp. spec. no. : c438q8 issued date : 2009.02.11 revised date : page no. : 8/9 MTC2804Q8 cystek product specification test circuit and waveforms
cystech electronics corp. spec. no. : c438q8 issued date : 2009.02.11 revised date : page no. : 9/9 MTC2804Q8 cystek product specification sop-8 dimension *: typical 8-lead sop-8 plastic package cystek packa g e code: q8 marking: top view a b front view f c d e g part a i h j k o m l n right side view part a date code device name 2804ss inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1909 0.2007 4.85 5.10 i 0.0019 0.0078 0.05 0.20 b 0.1515 0.1555 3.85 3.95 j 0.0118 0.0275 0.30 0.70 c 0.2283 0.2441 5.80 6.20 k 0.0074 0.0098 0.19 0.25 d 0.0480 0.0519 1.22 1.32 l 0.0145 0.0204 0.37 0.52 e 0.0145 0.0185 0.37 0.47 m 0.0118 0.0197 0.30 0.50 f 0.1472 0.1527 3.74 3.88 n 0.0031 0.0051 0.08 0.13 g 0.0570 0.0649 1.45 1.65 o 0.0000 0.0059 0.00 0.15 h 0.1889 0.2007 4.80 5.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: kfc ; pure tin plated plating ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
|
